| PART |
Description |
Maker |
| W641GG2JB-14 |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| HYB18H512321BF-08 HYB18H512321BF-10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H512321AF-12 HYB18H512321AFL14 HYB18H512321AF |
512-Mbit GDDR3 Graphics RAM
|
Infineon
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| MT41LC256K32D4 |
Synchronous Graphics RAM
|
Micron Technology
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| IDGV1G-05A1F1C-45X |
32M X 32 SYNCHRONOUS GRAPHICS RAM, PBGA170
|
QIMONDA AG
|
| MSM54V25632A |
131,072-Word x 32-Bit x 2-Bank Synchronous Graphics RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| HYB18M1G16 HYB18M1G160BF-7.5 HYE18M1G161BF-7.5 HYE |
1-Gbit x16 DDR Mobile-RAM 64M X 16 DDR DRAM, 5.5 ns, PBGA60
|
Qimonda AG
http://
|
